Post History
I'm fairly new here and I don't want to ask a question that is too basic or has a too obvious answer that everyone (except me) could find on the net. Old fashioned (to avoid "ancient") p-n juncti...
#2: Post edited
by
watchmaker
·
2025-10-25T19:26:54Z (11 months ago)
typo & (hopefully) better wording
I' fairly new here and I don't want to ask a question that is too easy or has a too obvious answer that everyone (except me) could find on the net.- Old fashioned (to avoid "ancient") p-n junction devices suffered from a voltage drop (0.6V for Si, 0.2V for Ge, if I remember correctly).
- FETs and CMOS were the latest highlight back then, and highly prone to be destructed from static electricity ("don't touch with your fingers").
- That does not look like a problem nowadays.
- How is that achieved?
- I'm fairly new here and I don't want to ask a question that is too basic or has a too obvious answer that everyone (except me) could find on the net.
- Old fashioned (to avoid "ancient") p-n junction devices suffered from a voltage drop (0.6V for Si, 0.2V for Ge, if I remember correctly).
- FETs and CMOS were the latest highlight back then, and highly prone to be destructed from static electricity ("don't touch with your fingers").
- That does not look like a problem nowadays.
- How is that achieved?
#1: Initial revision
by
watchmaker
·
2025-10-25T18:31:59Z (11 months ago)
Would that question about diodes and transistors be OK here?
I' fairly new here and I don't want to ask a question that is too easy or has a too obvious answer that everyone (except me) could find on the net.
Old fashioned (to avoid "ancient") p-n junction devices suffered from a voltage drop (0.6V for Si, 0.2V for Ge, if I remember correctly).
FETs and CMOS were the latest highlight back then, and highly prone to be destructed from static electricity ("don't touch with your fingers").
That does not look like a problem nowadays.
How is that achieved?