Comments on High Power Switch - High Side vs. Low Side Switching
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High Power Switch - High Side vs. Low Side Switching
Imagine a battery pack with <=60VDC of maximum voltage and a load of up to 10kW of power(the PMSM inverter with the input capacitance of up to 1mF). The load is not always known - could be 100uF-1000uF input capacitance while the currents usually range from 20A up until 150A. The load is switched on/off using N channel Mosfets. Since there is no galvanic isolation present in the system peripheral communication interfaces(i.e. RS485/CAN) share the same GND as the load.
Approach 1) Switch the high side. Put FETs on the high side and control the "ctrl" net using gate drivers. The communication interface(RS485/CAN) is referenced to the "COM_GND" net.
Approach 2) Switch the low side. Put FETs on the low side and control the "ctrl" net using a 12V switch without gate drivers. However, in this case, the communication interface is referenced to the "COM_GND" net.
Note: Precharge circuit is present but omitted from the schematic
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Is there a superior architecture approach in this case?
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Could "Approach 2)" harm any of the components due to the ground reference loss?
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