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Comments on High Power Switch - High Side vs. Low Side Switching

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High Power Switch - High Side vs. Low Side Switching

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Imagine a battery pack with <=60VDC of maximum voltage and a load of up to 10kW of power(the PMSM inverter with the input capacitance of up to 1mF). The load is not always known - could be 100uF-1000uF input capacitance while the currents usually range from 20A up until 150A. The load is switched on/off using N channel Mosfets. Since there is no galvanic isolation present in the system peripheral communication interfaces(i.e. RS485/CAN) share the same GND as the load.

Approach 1) high side switch Switch the high side. Put FETs on the high side and control the "ctrl" net using gate drivers. The communication interface(RS485/CAN) is referenced to the "COM_GND" net.

Approach 2) low side switch Switch the low side. Put FETs on the low side and control the "ctrl" net using a 12V switch without gate drivers. However, in this case, the communication interface is referenced to the "COM_GND" net.

Note: Precharge circuit is present but omitted from the schematic

  1. Is there a superior architecture approach in this case?

  2. Could "Approach 2)" harm any of the components due to the ground reference loss?

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General comments (6 comments)
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Answer to question 1: First, you need p-mos and not n-mos, as you are switching the circuit from the above. Second, it is better and simpler to parallelize mosfets for big current switches; this will reduce the power dissipation as well.

So, even if there exist a pmos with 150A ability (which I'm not sure), it is probably better and less expensive to parallelize 3 p-mos (say) of 60A. The NVD5117PL 60V, 60A, is an option. Here is the schematic:

pmos-parallel

And here is a solution if you have to control the switch from below:

pmos-parallel2

Answer to question 2: There is apparently no problem with your second approach, but we don't know the whole story: is there anything else connected to the battery? we need to know the whole circuitry to answer to this question. Also, you may connect the ground after the mosfet switch, if the battery is floating. Finally, are you sure you know how to connect mosfets in series to distribute the power? this is not as trivial as parallelizing them for a switch!

Note: Again, I would implement 2 or 3 n-mos in parallel, in place of 2 n-mos in series.

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General comments (2 comments)
General comments
2kind‭ wrote almost 4 years ago

Thanks for the comment @coquelicot. I made the mistake of not asking the question properly and thereby caused confusion. Will try to avoid this in the future as much as possible. Once again, sorry about that.

Now, the point was not how to parallelize the current flow on the MOSFETs but do's and don't do's for high vs. low side switching. I like your idea about parallelizing PFET's because due to the different mobility of holes they tend to have higher conduction resistance.

coquelicot‭ wrote almost 4 years ago

Well, you asked as if there a superior architecture approach, so I answered to that.